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v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
Features
SMT mmWave Package Psat Output Power: +21 dBm High Gain: 21 dB No External Matching Required
8
AMPLIFIERS - SMT
Typical Applications
The HMC283LM1 is ideal for: * Millimeterwave Point-to-Point Radios * LMDS * SATCOM
Functional Diagram
General Description
The HMC283LM1 is a Medium Power Amplifier (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match preserving MMIC chip performance. Utilizing a GaAs PHEMT process, the device offers 20 dB gain and +21 dBm ouput power from a bias supply of +3.5V @ 300mA. As an alternative to chip-and-wire hybrid assemblies the HMC283LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. The amplifier may be used as a frequency doubler. A built-in-test pad (Vdet) allows monitoring of microwave output power. All data is with the non-hermetic, epoxy sealed LM1 packaged MPA device mounted in a 50 ohm test fixture.
Electrical Specifications, TA = +25 C, Vdd= +3.5V*, ldd = 300 mA
Parameter Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 6 4 30 14 17 22 15 Min. Typ. 17 - 40 20 0.05 10 7 40 18 21 27 10 300 330 0.07 6 4 35 14 17 21 17 Max. Min. Typ. 21 - 30 22 0.05 12 8 45 18 21 27 10 300 330 0.07 Max. Units GHz dB dB/C dB dB dB dBm dBm dBm dB mA
*Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v04.1201
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
Broadband Gain & Return Loss
30 25 20
Gain vs. Temperature
30 25 20
8
AMPLIFIERS - SMT
8 - 15
RESPONSE (dB)
15
5 0 -5 -10 -15 -20 -25 10 15 20 25 30 35
GAIN (dB)
10
S11 S21 S22
15 10 5 0
+25C +85C -40C
40
16
18
20
22
24 26
28
30
32
34
36
38
40 42
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
Input Return Loss vs. Temperature
0
REVERSE ISOLATION (dB)
INPUT RETURN LOSS (dB)
-10 -20 -30 -40 -50 -60 16 18 20 22 24 26 28 30 32 34 36
+25C +85C -40C
-5
-10
-15
+25C +85C -40C
-20
-25 38 40 42 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) FREQUENCY (GHz)
P1dB and Psat @ 25 C
25
Output Return Loss vs. Temperature
0
OUTPUT P1dB & Psat (dBm)
23
OUTPUT RETURN LOSS (dB)
Psat
21 19 17
-5
-10
P1dB
15 13 16 18 20 22 24 26 28 30 32 34 36 38 40
-15
+25C +85C -40C
-20 16 18 20 22 24 26 28 30 32 34 36 38 40 42
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v04.1201
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
25 23
Power Compression @ 20 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
22 20 18 16 14 12 10 8 6 4 2 Pout
Gain
OUTPUT P1dB (dBm)
-40 C
21 19 17 15
+25 C
+85C
13 16 18 20 22 24 26 28 30 32 34 36 38 40
PAE
0 -10
-8
-6
-4
-2
0
2
4
6
8
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Psat vs. Temperature
25 23 21 19 17
Power Compression @ 28 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
-40 C
+25 C
22 20 18 16 14 12 10 8 6 4 2 Pout
Gain
Psat (dBm)
+85C
15 13 16 18 20 22 24 26 28 30 32 34 36 38 40
PAE
0 -10
-8
-6
-4
-2
0
2
4
6
8
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IP3 vs. Temperature
Frequency (GHz)
Power Compression @ 39 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
22 20 18 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 Pout
Gain
Temperature -40 C +25 C +85 C All levels in dBm
20 29.0 28.5 27.5
28 28.0 27.5 26.0
38 31.0 28.5 24.5
PAE
-2
0
2
4
6
8
10
INPUT POWER (dBm)
8 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v04.1201
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Drain Bias Current (Idd) Gate Bias Voltage (Vgg1, Vgg2) Gate Bias Current (Igg) RF Input Power (RFin)(Vdd = +3.5 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 16 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.0 Vdc 400 mA
8
AMPLIFIERS - SMT
NOTES: 1. MATERIAL: PLASTIC 2. PLATING: GOLD OVER NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. ALL TOLERANCES ARE 0.005 [ 0.13]. 5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND. 6.
-2.0 to +0.4 Vdc 4.0 mA +10 dBm 175 C 1.44 W
62.5 C/W -65 to +150 C -40 to +85 C
Outline Drawing
Pin 1 2 3 4 5 6 7 8
Function GND Vdd GND RF OUT VDET Vgg2 Vgg1 RF IN
* INDICATES PIN 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 17
MICROWAVE CORPORATION
v04.1201
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
LM1 Evaluation PCB
The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG) probes for testing. Suggested probe pitch is 400um (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors.
Evaluation Circuit Board Layout Design Details
Layout Technique Material Dielectric Thickness Microstrip Line Width CPWG Line Width CPWG Line to GND Gap Ground Via Hole Diameter C1 C2 R1 R2 Micro Strip to CPWG Rogers 4003 with 1/2 oz. Cu 0.008" (0.20 mm) 0.018" (0.46 mm) 0.016" (0.41 mm) 0.005" (0.13 mm) 0.008" (0.20 mm) 100 pF Capacitor, 0402 Pkg. 33,000 pF Capacitor, 1206 Pkg. 1,000 Ohm Resistor, 0402 Pkg. 100 Ohm Resistor, 0402 Pkg.
LM1 Package Mounted to Evaluation PCB
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v04.1201
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
Suggested LM1 PCB Land Pattern Tolerance: 0.003" ( 0.08 mm)
8
AMPLIFIERS - SMT
Amplifier Application Circuit
Recommended Component Values C1 C2 R1 R2 100 pF 33,000 pF 1,000 Ohm 100 Ohm
Note: Vgg1 and Vgg2 may be connected to a common Vgg feed. For optimal stable operation, it is recommended that a voltage divider network be employed as shown above with Vgg set to achieve ldd = 300 mA typical. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 19
MICROWAVE CORPORATION
v04.1201
HMC283LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz
8
AMPLIFIERS - SMT
Recommended SMT Attachment Technique
Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting
The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to 225 allow proper mechanical attachment and to optimize electrical 200 performance at millimeterwave frequencies. The PCB layout 175 pattern can be found on each LM1 product data sheet. It can 150 also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. 125 Follow these precautions to avoid permanent damage: Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. LM1 devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas.
TEMPERATURE ( C)
0
100 75 50 25 0 1 2 3 4 5 6 7 8
TIME (min) Static Sensitivity: Follow ESD precautions to protect against Recommended solder reflow profile ESD strikes. for HMC LM1 SMT package General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoid damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended.
Solder Paste
Solder paste should be selected based on the user's experience and should be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies.
Solder Reflow
The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. Follow solder paste and oven vendor's recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 2350C for 15 seconds. Verify that the profile will not expose the device to temperatures in excess of 2350C.
Cleaning
A water-based flux wash may be used.
8 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs AMPLIFIER, 17 - 40 GHz
Alternate Applications: Frequency Multiplier Performance
HMC283LM1 can also perform as a frequency multiplier. This is accomplished by biasing Vg1 into its pinchoff region - typically -1V to -2V. By adjusting the Vg1 bias, the device will operate as a doubler or tripler. Vg2 may also be adjusted to minimize the levels of unwanted harmonics. The plot shows the performance of HMC283 operated as a doubler with Vg1 = -1V and the remaining gate voltages (Vg2, 3, 4) set to -0.15V. In this condition the amplifier draws 310mA at 3.5V drain bias (Vdd) and provides +5dB to -5dB conversion loss dependent upon the output frequency.
5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 10 15
8
15 dBm 18 dBm
10 dBm
20
25
30
35
40
OUTPUT FREQUENCY (GHz)
Voltage Detector, Built-In-Test (B.I.T.)
By connecting the Vdet port to a 10k Ohm resistor and monitoring the voltage, a B.I.T. circuit can be created to monitor changes in the device output power. This circuit is extremely well compensated for temperature variations as shown in the first plot. The detected voltage does change with frequency and the second plot shows its variation.
1.6
2 1.8
DETECTED VOLTAGE INTO 10K RESISTOR (Volts)
DETECTED VOLTAGE INTO 10K RESISTOR (Volts)
1.4 1.2 1 0.8 0.6 +85 C 0.4 0.2 0 10 12 14 16 18 OUTPUT POWER (dBm) -55 C +25 C 20 22
1.6 1.4 22 GHz 1.2 1 0.8 0.6 0.4 0.2 0 10 12 14 16 18 20 22 OUTPUT POWER (dBm) 38 GHz 28 GHz 18 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 21
AMPLIFIERS - SMT
CONVERSION LOSS (dB)

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